| Manufacturer |
Diodes Incorporated |
| RoHS |
Details |
| Technology |
Si |
| Mounting Style |
SMD/SMT |
| Package / Case |
DFN-2020-6 |
| Transistor Polarity |
P-Channel |
| Number of Channels |
2 Channel |
| Vds – Drain-Source Breakdown Voltage |
12 V |
| Id – Continuous Drain Current |
3.9 A |
| Rds On – Drain-Source Resistance |
215 mOhms |
| Vgs – Gate-Source Voltage |
– 8 V, + 8 V |
| Vgs th – Gate-Source Threshold Voltage |
1 V |
| Qg – Gate Charge |
13 nC |
| Minimum Operating Temperature |
– 55 C |
| Maximum Operating Temperature |
+ 150 C |
| Pd – Power Dissipation |
1.89 W |
| Channel Mode |
Enhancement |
| Brand |
Diodes Incorporated |
| Configuration |
Dual |
| Product Type |
MOSFET |
| Factory Pack Quantity |
3000 |
| Subcategory |
MOSFETs |
| Unit Weight |
0.000238 oz |