SI2323DDS-T1-GE3

Manufacturer Part Number: SI2323DDS-T1-GE3	Manufacturer / Brand: Vishay
Part of Description: MOSFET -20V Vds 8V Vgs SOT-23	Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Ship From: HK/Shen Zhen	Shipment Way: DHL/Fedex/TNT/UPS
Datasheets: datasheet-22.pdf

Product parameters

Manufacturer	Vishay
Product Category	MOSFET
RoHS	Details
Technology	Si
Mounting Style	SMD/SMT
Package / Case	SOT-23-3
Transistor Polarity	P-Channel
Number of Channels	1 Channel
Vds – Drain-Source Breakdown Voltage	20 V
Id – Continuous Drain Current	5.3 A
Rds On – Drain-Source Resistance	39 mOhms
Vgs – Gate-Source Voltage	– 8 V, + 8 V
Vgs th – Gate-Source Threshold Voltage	1 V
Qg – Gate Charge	13.6 nC
Minimum Operating Temperature	– 55 C
Maximum Operating Temperature	+ 150 C
Pd – Power Dissipation	1.7 W
Channel Mode	Enhancement
Tradename	TrenchFET
Brand	Vishay Semiconductors
Configuration	Single
Fall Time	11 ns
Product Type	MOSFET
Rise Time	22 ns
Series	SI2
Factory Pack Quantity	3000
Subcategory	MOSFETs
Transistor Type	1 P-Channel
Typical Turn-Off Delay Time	52 ns
Typical Turn-On Delay Time	24 ns
Part # Aliases	SI2323DDS-T1-BE3
Unit Weight	0.000282 oz
Length	2.9 mm
Width	1.6 mm
Height	1.45 mm