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SI2323DDS-T1-GE3

Manufacturer Part Number: SI2323DDS-T1-GE3 Manufacturer / Brand: Vishay
Part of Description: MOSFET -20V Vds 8V Vgs SOT-23 Lead Free Status / RoHS Status: table_img Lead free / RoHS Compliant
Ship From: HK/Shen Zhen Shipment Way: DHL/Fedex/TNT/UPS
Datasheets:

Product parameters

Manufacturer Vishay
Product Category MOSFET
RoHS Details
Technology Si
Mounting Style SMD/SMT
Package / Case SOT-23-3
Transistor Polarity P-Channel
Number of Channels 1 Channel
Vds – Drain-Source Breakdown Voltage 20 V
Id – Continuous Drain Current 5.3 A
Rds On – Drain-Source Resistance 39 mOhms
Vgs – Gate-Source Voltage – 8 V, + 8 V
Vgs th – Gate-Source Threshold Voltage 1 V
Qg – Gate Charge 13.6 nC
Minimum Operating Temperature – 55 C
Maximum Operating Temperature + 150 C
Pd – Power Dissipation 1.7 W
Channel Mode Enhancement
Tradename TrenchFET
Brand Vishay Semiconductors
Configuration Single
Fall Time 11 ns
Product Type MOSFET
Rise Time 22 ns
Series SI2
Factory Pack Quantity 3000
Subcategory MOSFETs
Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 52 ns
Typical Turn-On Delay Time 24 ns
Part # Aliases SI2323DDS-T1-BE3
Unit Weight 0.000282 oz
Length 2.9 mm
Width 1.6 mm
Height 1.45 mm

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