Manufacturer |
STMicroelectronics |
RoHS |
Details |
Technology |
Si |
Mounting Style |
Through Hole |
Package / Case |
TO-220-3 |
Transistor Polarity |
N-Channel |
Number of Channels |
1 Channel |
Vds – Drain-Source Breakdown Voltage |
620 V |
Id – Continuous Drain Current |
5.5 A |
Rds On – Drain-Source Resistance |
1.28 Ohms |
Vgs – Gate-Source Voltage |
– 30 V, + 30 V |
Vgs th – Gate-Source Threshold Voltage |
3.75 V |
Qg – Gate Charge |
34 nC |
Minimum Operating Temperature |
– 55 C |
Maximum Operating Temperature |
+ 150 C |
Pd – Power Dissipation |
90 W |
Channel Mode |
Enhancement |
Tradename |
SuperMESH |
Brand |
STMicroelectronics |
Configuration |
Single |
Fall Time |
19 ns |
Product Type |
MOSFET |
Rise Time |
12.5 ns |
Series |
STF6N62K3 |
Factory Pack Quantity |
1000 |
Subcategory |
MOSFETs |
Transistor Type |
1 N-Channel |
Typical Turn-Off Delay Time |
27 ns |
Typical Turn-On Delay Time |
13 ns |
Unit Weight |
0.068784 oz |
Length |
10.4 mm |
Width |
4.6 mm |
Height |
9.3 mm |