SI2308BDS-T1-GE3

Manufacturer Part Number: SI2308BDS-T1-GE3	Manufacturer / Brand: Vishay
Part of Description: MOSFET 60V Vds 20V Vgs SOT-23	Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Ship From: HK/Shen Zhen	Shipment Way: DHL/Fedex/TNT/UPS
Datasheets: datasheet-2.pdf

Product parameters

Manufacturer	Vishay
RoHS	Details
Technology	Si
Mounting Style	SMD/SMT
Package / Case	SOT-23-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds – Drain-Source Breakdown Voltage	60 V
Id – Continuous Drain Current	2.3 A
Rds On – Drain-Source Resistance	156 mOhms
Vgs – Gate-Source Voltage	– 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage	3 V
Qg – Gate Charge	2.3 nC
Minimum Operating Temperature	– 55 C
Maximum Operating Temperature	+ 150 C
Pd – Power Dissipation	1.66 W
Channel Mode	Enhancement
Tradename	TrenchFET
Brand	Vishay Semiconductors
Configuration	Single
Fall Time	7 ns
Product Type	MOSFET
Rise Time	10 ns
Series	SI2
Factory Pack Quantity	3000
Subcategory	MOSFETs
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	10 ns
Typical Turn-On Delay Time	4 ns
Part # Aliases	SI2308BDS-T1-BE3 SI2308BDS-GE3
Unit Weight	0.000282 oz