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Manufacturer Part Number: SI2308BDS-T1-GE3 Manufacturer / Brand: Vishay
Part of Description: MOSFET 60V Vds 20V Vgs SOT-23 Lead Free Status / RoHS Status: table_img Lead free / RoHS Compliant
Ship From: HK/Shen Zhen Shipment Way: DHL/Fedex/TNT/UPS

Product parameters

Manufacturer Vishay
RoHS Details
Technology Si
Mounting Style SMD/SMT
Package / Case SOT-23-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds – Drain-Source Breakdown Voltage 60 V
Id – Continuous Drain Current 2.3 A
Rds On – Drain-Source Resistance 156 mOhms
Vgs – Gate-Source Voltage – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage 3 V
Qg – Gate Charge 2.3 nC
Minimum Operating Temperature – 55 C
Maximum Operating Temperature + 150 C
Pd – Power Dissipation 1.66 W
Channel Mode Enhancement
Tradename TrenchFET
Brand Vishay Semiconductors
Configuration Single
Fall Time 7 ns
Product Type MOSFET
Rise Time 10 ns
Series SI2
Factory Pack Quantity 3000
Subcategory MOSFETs
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 10 ns
Typical Turn-On Delay Time 4 ns
Part # Aliases SI2308BDS-T1-BE3 SI2308BDS-GE3
Unit Weight 0.000282 oz

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