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Manufacturer Part Number: IRF640NPBF Manufacturer / Brand: Infineon
Part of Description: MOSFET MOSFT 200V 18A 150mOhm 44.7nC Lead Free Status / RoHS Status: table_img Lead free / RoHS Compliant
Ship From: HK/Shen Zhen Shipment Way: DHL/Fedex/TNT/UPS

Product parameters

Manufacturer Infineon
RoHS Details
Technology Si
Mounting Style Through Hole
Package / Case TO-220-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds – Drain-Source Breakdown Voltage 200 V
Id – Continuous Drain Current 18 A
Rds On – Drain-Source Resistance 150 mOhms
Vgs – Gate-Source Voltage – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage 2 V
Qg – Gate Charge 44.7 nC
Minimum Operating Temperature – 55 C
Maximum Operating Temperature + 175 C
Pd – Power Dissipation 150 W
Channel Mode Enhancement
Brand Infineon / IR
Configuration Single
Fall Time 5.5 ns
Product Type MOSFET
Rise Time 19 ns
Factory Pack Quantity 2000
Subcategory MOSFETs
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 23 ns
Typical Turn-On Delay Time 10 ns
Part # Aliases IRF640NPBF SP001570078
Unit Weight 0.068784 oz
Length 10 mm
Width 4.4 mm
Height 15.65 mm

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