| Manufacturer |
STMicroelectronics |
| RoHS |
Details |
| Technology |
Si |
| Mounting Style |
Through Hole |
| Package / Case |
TO-220-3 |
| Transistor Polarity |
N-Channel |
| Number of Channels |
1 Channel |
| Vds – Drain-Source Breakdown Voltage |
620 V |
| Id – Continuous Drain Current |
5.5 A |
| Rds On – Drain-Source Resistance |
1.28 Ohms |
| Vgs – Gate-Source Voltage |
– 30 V, + 30 V |
| Vgs th – Gate-Source Threshold Voltage |
3.75 V |
| Qg – Gate Charge |
34 nC |
| Minimum Operating Temperature |
– 55 C |
| Maximum Operating Temperature |
+ 150 C |
| Pd – Power Dissipation |
90 W |
| Channel Mode |
Enhancement |
| Tradename |
SuperMESH |
| Brand |
STMicroelectronics |
| Configuration |
Single |
| Fall Time |
19 ns |
| Product Type |
MOSFET |
| Rise Time |
12.5 ns |
| Series |
STF6N62K3 |
| Factory Pack Quantity |
1000 |
| Subcategory |
MOSFETs |
| Transistor Type |
1 N-Channel |
| Typical Turn-Off Delay Time |
27 ns |
| Typical Turn-On Delay Time |
13 ns |
| Unit Weight |
0.068784 oz |
| Length |
10.4 mm |
| Width |
4.6 mm |
| Height |
9.3 mm |