| Manufacturer |
Vishay |
| RoHS |
Details |
| Technology |
Si |
| Mounting Style |
SMD/SMT |
| Package / Case |
PowerPAK-1212-8 |
| Transistor Polarity |
N-Channel |
| Number of Channels |
1 Channel |
| Vds – Drain-Source Breakdown Voltage |
30 V |
| Id – Continuous Drain Current |
35 A |
| Rds On – Drain-Source Resistance |
6 mOhms |
| Vgs – Gate-Source Voltage |
– 20 V, + 20 V |
| Vgs th – Gate-Source Threshold Voltage |
1.15 V |
| Qg – Gate Charge |
42 nC |
| Minimum Operating Temperature |
– 55 C |
| Maximum Operating Temperature |
+ 150 C |
| Pd – Power Dissipation |
52 W |
| Channel Mode |
Enhancement |
| Tradename |
TrenchFET, PowerPAK |
| Brand |
Vishay Semiconductors |
| Configuration |
Single |
| Product Type |
MOSFET |
| Series |
SIS |
| Factory Pack Quantity |
3000 |
| Subcategory |
MOSFETs |
| Part # Aliases |
SIJ484DP-T1-GE3 |
| Unit Weight |
0.032487 oz |