Manufacturer |
Infineon |
RoHS |
Details |
Technology |
Si |
Mounting Style |
SMD/SMT |
Package / Case |
SOIC-8 |
Transistor Polarity |
P-Channel |
Number of Channels |
1 Channel |
Vds – Drain-Source Breakdown Voltage |
20 V |
Id – Continuous Drain Current |
5.3 A |
Rds On – Drain-Source Resistance |
100 mOhms |
Vgs – Gate-Source Voltage |
– 12 V, + 12 V |
Vgs th – Gate-Source Threshold Voltage |
1 V |
Qg – Gate Charge |
25 nC |
Minimum Operating Temperature |
– 55 C |
Maximum Operating Temperature |
+ 150 C |
Pd – Power Dissipation |
2.5 W |
Channel Mode |
Enhancement |
Brand |
Infineon / IR |
Configuration |
Single |
Product Type |
MOSFET |
Factory Pack Quantity |
4000 |
Subcategory |
MOSFETs |
Transistor Type |
1 P-Channel |
Part # Aliases |
IRF7204TRPBF SP001551198 |
Unit Weight |
0.019048 oz |
Length |
4.9 mm |
Width |
3.9 mm |
Height |
1.75 mm |