| Manufacturer |
Infineon |
| RoHS |
Details |
| Technology |
Si |
| Mounting Style |
Through Hole |
| Package / Case |
TO-220-3 |
| Transistor Polarity |
N-Channel |
| Number of Channels |
1 Channel |
| Vds – Drain-Source Breakdown Voltage |
100 V |
| Id – Continuous Drain Current |
57 A |
| Rds On – Drain-Source Resistance |
23 mOhms |
| Vgs – Gate-Source Voltage |
– 20 V, + 20 V |
| Vgs th – Gate-Source Threshold Voltage |
4 V |
| Qg – Gate Charge |
86.7 nC |
| Minimum Operating Temperature |
– 55 C |
| Maximum Operating Temperature |
+ 175 C |
| Pd – Power Dissipation |
200 W |
| Channel Mode |
Enhancement |
| Brand |
Infineon / IR |
| Configuration |
Single |
| Product Type |
MOSFET |
| Factory Pack Quantity |
1000 |
| Subcategory |
MOSFETs |
| Transistor Type |
1 N-Channel |
| Part # Aliases |
IRF3710PBF SP001551058 |
| Unit Weight |
0.068784 oz |
| Length |
10 mm |
| Width |
4.4 mm |
| Height |
15.65 mm |