Manufacturer |
Diodes Incorporated |
RoHS |
Details |
Technology |
Si |
Mounting Style |
SMD/SMT |
Package / Case |
SOT-323-3 |
Transistor Polarity |
N-Channel |
Number of Channels |
1 Channel |
Vds – Drain-Source Breakdown Voltage |
60 V |
Id – Continuous Drain Current |
340 mA |
Rds On – Drain-Source Resistance |
1.2 Ohms |
Vgs – Gate-Source Voltage |
– 20 V, + 20 V |
Vgs th – Gate-Source Threshold Voltage |
500 mV |
Qg – Gate Charge |
500 pC |
Minimum Operating Temperature |
– 55 C |
Maximum Operating Temperature |
+ 150 C |
Pd – Power Dissipation |
320 mW |
Channel Mode |
Enhancement |
Brand |
Diodes Incorporated |
Configuration |
Single |
Fall Time |
12.5 ns |
Product Type |
MOSFET |
Rise Time |
2.5 ns |
Series |
DMN62D0UW |
Factory Pack Quantity |
3000 |
Subcategory |
MOSFETs |
Transistor Type |
1 N-Channel |
Typical Turn-Off Delay Time |
22.6 ns |
Typical Turn-On Delay Time |
2.4 ns |
Unit Weight |
0.000212 oz |