BSS308PE H6327

Manufacturer Part Number: BSS308PE H6327	Manufacturer / Brand: Infineon
Part of Description: MOSFET P-Ch -30V -2A SOT-23-3	Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Ship From: HK/Shen Zhen	Shipment Way: DHL/Fedex/TNT/UPS
Datasheets: datasheet-194.pdf

Product parameters BSS308PE H6327

Manufacturer	Infineon
RoHS	Details
Technology	Si
Mounting Style	SMD/SMT
Package / Case	SOT-23-3
Transistor Polarity	P-Channel
Number of Channels	1 Channel
Vds – Drain-Source Breakdown Voltage	30 V
Id – Continuous Drain Current	2 A
Rds On – Drain-Source Resistance	62 mOhms
Vgs – Gate-Source Voltage	– 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage	2 V
Qg – Gate Charge	5 nC
Minimum Operating Temperature	– 55 C
Maximum Operating Temperature	+ 150 C
Pd – Power Dissipation	500 mW
Channel Mode	Enhancement
Brand	Infineon Technologies
Configuration	Single
Fall Time	2.8 ns
Product Type	MOSFET
Rise Time	7.7 ns
Series	BSS308
Factory Pack Quantity	9000
Subcategory	MOSFETs
Transistor Type	1 P-Channel
Typical Turn-Off Delay Time	15.3 ns
Typical Turn-On Delay Time	5.6 ns
Part # Aliases	BSS38PEH6327XT SP000928942 BSS308PEH6327XTSA1
Unit Weight	0.000282 oz
Length	2.9 mm
Width	1.3 mm
Height	1.1 mm
Qualification	AEC-Q101