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Product parameters
Manufacturer: | Toshiba |
Product Category: | MOSFET |
RoHS: | Details |
Technology: | Si |
Mounting Style: | Through Hole |
Package / Case: | TO-220-3 |
Transistor Polarity: | N-Channel |
Number of Channels: | 1 Channel |
Vds – Drain-Source Breakdown Voltage: | 650 V |
Id – Continuous Drain Current: | 8 A |
Rds On – Drain-Source Resistance: | 840 mOhms |
Vgs – Gate-Source Voltage: | – 30 V, + 30 V |
Vgs th – Gate-Source Threshold Voltage: | 2 V |
Qg – Gate Charge: | 25 nC |
Minimum Operating Temperature: | – 55 C |
Maximum Operating Temperature: | + 150 C |
Pd – Power Dissipation: | 45 W |
Channel Mode: | Enhancement |
Tradename: | MOSVII |
Series: | TK8A65D |
Packaging: | Tube |
Brand: | Toshiba |
Configuration: | Single |
Height: | 15 mm |
Length: | 10 mm |
Product Type: | MOSFET |
Factory Pack Quantity: Factory Pack Quantity: | 50 |
Subcategory: | MOSFETs |
Transistor Type: | 1 N-Channel |
Width: | 4.5 mm |
Unit Weight: | 0.068784 oz |