| Manufacturer |
Diodes Incorporated |
| RoHS |
Details |
| Technology |
Si |
| Mounting Style |
SMD/SMT |
| Package / Case |
SOIC-8 |
| Transistor Polarity |
N-Channel |
| Number of Channels |
2 Channel |
| Vds – Drain-Source Breakdown Voltage |
30 V |
| Id – Continuous Drain Current |
6.9 A |
| Rds On – Drain-Source Resistance |
22 mOhms |
| Vgs – Gate-Source Voltage |
– 20 V, + 20 V |
| Minimum Operating Temperature |
– 55 C |
| Maximum Operating Temperature |
+ 150 C |
| Pd – Power Dissipation |
2 W |
| Channel Mode |
Enhancement |
| Brand |
Diodes Incorporated |
| Configuration |
Dual |
| Fall Time |
30 ns |
| Product Type |
MOSFET |
| Rise Time |
7 ns |
| Series |
DMN3033 |
| Factory Pack Quantity |
2500 |
| Subcategory |
MOSFETs |
| Transistor Type |
2 N-Channel |
| Typical Turn-Off Delay Time |
63 ns |
| Typical Turn-On Delay Time |
11 ns |
| Unit Weight |
0.030018 oz |
| Length |
5.3 mm |
| Width |
4.1 mm |
| Height |
1.5 mm |