| Manufacturer |
STMicroelectronics |
| RoHS |
Details |
| Technology |
Si |
| Mounting Style |
Through Hole |
| Package / Case |
TO-220-3 |
| Transistor Polarity |
N-Channel |
| Number of Channels |
1 Channel |
| Vds – Drain-Source Breakdown Voltage |
100 V |
| Id – Continuous Drain Current |
80 A |
| Rds On – Drain-Source Resistance |
15 mOhms |
| Vgs – Gate-Source Voltage |
– 20 V, + 20 V |
| Vgs th – Gate-Source Threshold Voltage |
2 V |
| Qg – Gate Charge |
135 nC |
| Minimum Operating Temperature |
– 55 C |
| Maximum Operating Temperature |
+ 175 C |
| Pd – Power Dissipation |
300 W |
| Channel Mode |
Enhancement |
| Tradename |
STripFET |
| Packaging |
Tube |
| Brand |
STMicroelectronics |
| Configuration |
Single |
| Fall Time |
60 ns |
| Product Type |
MOSFET |
| Rise Time |
80 ns |
| Series |
STP80NF10 |
| Factory Pack Quantity |
1000 |
| Subcategory |
MOSFETs |
| Transistor Type |
1 N-Channel Power MOSFET |
| Typical Turn-Off Delay Time |
116 ns |
| Typical Turn-On Delay Time |
26 ns |
| Unit Weight |
0.068784 oz |
| Length |
10.4 mm |
| Width |
4.6 mm |
| Height |
9.15 mm |