Manufacturer |
Nexperia |
RoHS |
Details |
Technology |
Si |
Mounting Style |
SMD/SMT |
Package / Case |
SOT-23-3 |
Transistor Polarity |
P-Channel |
Number of Channels |
1 Channel |
Vds – Drain-Source Breakdown Voltage |
50 V |
Id – Continuous Drain Current |
180 mA |
Rds On – Drain-Source Resistance |
7.5 Ohms |
Vgs – Gate-Source Voltage |
– 20 V, + 20 V |
Vgs th – Gate-Source Threshold Voltage |
1.1 V |
Qg – Gate Charge |
260 pC |
Minimum Operating Temperature |
– 55 C |
Maximum Operating Temperature |
+ 150 C |
Pd – Power Dissipation |
420 mW |
Channel Mode |
Enhancement |
Brand |
Nexperia |
Configuration |
Single |
Fall Time |
25 ns |
Product Type |
MOSFET |
Rise Time |
11 ns |
Factory Pack Quantity |
3000 |
Subcategory |
MOSFETs |
Transistor Type |
1 P-Channel Trench MOSFET |
Typical Turn-Off Delay Time |
48 ns |
Typical Turn-On Delay Time |
13 ns |
Part # Aliases |
934065304215 |
Unit Weight |
0.000282 oz |
Qualification |
AEC-Q101 |