Manufacturer: |
Toshiba |
Product Category: |
MOSFET |
Technology: |
Si |
Mounting Style: |
SMD/SMT |
Package / Case: |
SOT-23F-3 |
Transistor Polarity: |
N-Channel |
Number of Channels: |
1 Channel |
Vds – Drain-Source Breakdown Voltage: |
40 V |
Id – Continuous Drain Current: |
2 A |
Rds On – Drain-Source Resistance: |
185 mOhms |
Vgs – Gate-Source Voltage: |
– 8 V, + 8 V |
Vgs th – Gate-Source Threshold Voltage: |
850 mV |
Maximum Operating Temperature: |
+ 150 C |
Pd – Power Dissipation: |
1 W |
Channel Mode: |
Enhancement |
Series: |
SSM3K339 |
Brand: |
Toshiba |
Configuration: |
Single |
Product Type: |
MOSFET |
Subcategory: |
MOSFETs |
Transistor Type: |
1 N-Channel |
Typical Turn-Off Delay Time: |
8 ns |
Typical Turn-On Delay Time: |
13 ns |
Unit Weight: |
0.000388 oz |