| Manufacturer |
Infineon |
| RoHS |
Details |
| Technology |
Si |
| Mounting Style |
SMD/SMT |
| Package / Case |
TO-263-3 |
| Transistor Polarity |
N-Channel |
| Number of Channels |
1 Channel |
| Vds – Drain-Source Breakdown Voltage |
800 V |
| Id – Continuous Drain Current |
17 A |
| Rds On – Drain-Source Resistance |
290 mOhms |
| Vgs – Gate-Source Voltage |
– 20 V, + 20 V |
| Vgs th – Gate-Source Threshold Voltage |
2.1 V |
| Qg – Gate Charge |
88 nC |
| Minimum Operating Temperature |
– 55 C |
| Maximum Operating Temperature |
+ 150 C |
| Pd – Power Dissipation |
227 W |
| Channel Mode |
Enhancement |
| Tradename |
CoolMOS |
| Brand |
Infineon Technologies |
| Configuration |
Single |
| Fall Time |
12 ns |
| Product Type |
MOSFET |
| Rise Time |
15 ns |
| Series |
CoolMOS C3 |
| Factory Pack Quantity |
1000 |
| Subcategory |
MOSFETs |
| Transistor Type |
1 N-Channel |
| Typical Turn-Off Delay Time |
72 ns |
| Typical Turn-On Delay Time |
25 ns |
| Part # Aliases |
SP000013370 SPB17N8C3XT SPB17N80C3ATMA1 |
| Unit Weight |
0.139332 oz |
| Length |
10 mm |
| Width |
9.25 mm |
| Height |
4.4 mm |