| Manufacturer |
Vishay |
| RoHS |
Details |
| Technology |
Si |
| Mounting Style |
SMD/SMT |
| Package / Case |
PowerPAK-1212-8 |
| Transistor Polarity |
N-Channel |
| Number of Channels |
1 Channel |
| Vds – Drain-Source Breakdown Voltage |
60 V |
| Id – Continuous Drain Current |
8.7 A |
| Rds On – Drain-Source Resistance |
25 mOhms |
| Vgs – Gate-Source Voltage |
– 20 V, + 20 V |
| Vgs th – Gate-Source Threshold Voltage |
1 V |
| Qg – Gate Charge |
25 nC |
| Minimum Operating Temperature |
– 55 C |
| Maximum Operating Temperature |
+ 150 C |
| Pd – Power Dissipation |
3.8 W |
| Channel Mode |
Enhancement |
| Tradename |
TrenchFET |
| Brand |
Vishay Semiconductors |
| Configuration |
Single |
| Fall Time |
12 ns |
| Product Type |
MOSFET |
| Rise Time |
30 ns |
| Series |
SI7 |
| Factory Pack Quantity |
3000 |
| Subcategory |
MOSFETs |
| Transistor Type |
1 N-Channel |
| Typical Turn-Off Delay Time |
30 ns |
| Typical Turn-On Delay Time |
15 ns |
| Part # Aliases |
SI7414DN-E3 |
| Unit Weight |
0.032487 oz |