| Manufacturer: |
Renesas Electronics |
| Product Category: |
MOSFET |
| RoHS: |
Details |
| Technology: |
Si |
| Mounting Style: |
SMD/SMT |
| Package / Case: |
TO-263-7 |
| Transistor Polarity: |
N-Channel |
| Number of Channels: |
1 Channel |
| Vds – Drain-Source Breakdown Voltage: |
40 V |
| Id – Continuous Drain Current: |
250 A |
| Rds On – Drain-Source Resistance: |
850 uOhms |
| Vgs – Gate-Source Voltage: |
– 20 V, + 20 V |
| Vgs th – Gate-Source Threshold Voltage: |
4 V |
| Qg – Gate Charge: |
245 nC |
| Maximum Operating Temperature: |
+ 175 C |
| Pd – Power Dissipation: |
348 W |
| Channel Mode: |
Enhancement |
| Packaging: |
Reel |
| Brand: |
Renesas Electronics |
| Configuration: |
Single |
| Fall Time: |
26 ns |
| Product Type: |
MOSFET |
| Rise Time: |
20 ns |
| Factory Pack Quantity: Factory Pack Quantity: |
800 |
| Subcategory: |
MOSFETs |
| Transistor Type: |
1 N-Channel |
| Typical Turn-Off Delay Time: |
148 ns |
| Typical Turn-On Delay Time: |
45 ns |