| Manufacturer: |
Renesas Electronics |
| Product Category: |
MOSFET |
| RoHS: |
Details |
| Technology: |
Si |
| Mounting Style: |
SMD/SMT |
| Package / Case: |
TO-252-4 |
| Transistor Polarity: |
N-Channel |
| Number of Channels: |
1 Channel |
| Vds – Drain-Source Breakdown Voltage: |
60 V |
| Id – Continuous Drain Current: |
90 A |
| Rds On – Drain-Source Resistance: |
5.3 mOhms |
| Vgs – Gate-Source Voltage: |
– 20 V, + 20 V |
| Vgs th – Gate-Source Threshold Voltage: |
2.5 V |
| Qg – Gate Charge: |
63 nC |
| Maximum Operating Temperature: |
+ 175 C |
| Pd – Power Dissipation: |
147 W |
| Channel Mode: |
Enhancement |
| Series: |
MOSFET |
| Packaging: |
Reel |
| Packaging: |
Cut Tape |
| Brand: |
Renesas Electronics |
| Configuration: |
Single |
| Fall Time: |
6 ns |
| Forward Transconductance – Min: |
40 S |
| Height: |
2.65 mm |
| Length: |
6.5 mm |
| Product Type: |
MOSFET |
| Rise Time: |
7 ns |
| Factory Pack Quantity: Factory Pack Quantity: |
2500 |
| Subcategory: |
MOSFETs |
| Typical Turn-Off Delay Time: |
24 ns |
| Typical Turn-On Delay Time: |
60 ns |
| Width: |
6.1 mm |