MMBT2222ALT1G

The MMBT2222ALT1G is an NPN silicon bipolar transistor manufactured by ON Semiconductor. It is designed for linear and low-power surface-mount and switching applications. This transistor features a maximum continuous collector current of 600 mA, with a collector-emitter voltage (VCEO) of 40 V and an emitter-base voltage (VEBO) of 6 V. It is packaged in a SOT-23 case style, which is a small and compact surface-mount package with three pins.

The MMBT2222ALT1G offers high-frequency performance with a transition frequency (fT) of 100 MHz, making it suitable for high-speed switching applications. It also has a maximum power dissipation (PD) of 300 mW, allowing it to handle moderate power levels without overheating.

Additionally, this transistor is compliant with RoHS standards and is halogen-free and BFR-free, making it suitable for use in environmentally conscious applications. It is also qualified to the AEC-Q101 standard, which makes it suitable for automotive and other applications requiring unique site and control change requirements.

Overall, the MMBT2222ALT1G is a versatile and reliable transistor that offers a combination of high-frequency performance, moderate power handling, and compact packaging, making it an ideal choice for a wide range of electronic applications.