| Manufacturer |
Vishay |
| RoHS |
Details |
| Technology |
Si |
| Mounting Style |
Through Hole |
| Package / Case |
TO-220AB-3 |
| Transistor Polarity |
N-Channel |
| Number of Channels |
1 Channel |
| Vds – Drain-Source Breakdown Voltage |
500 V |
| Id – Continuous Drain Current |
8 A |
| Rds On – Drain-Source Resistance |
850 mOhms |
| Vgs – Gate-Source Voltage |
– 20 V, + 20 V |
| Vgs th – Gate-Source Threshold Voltage |
4 V |
| Qg – Gate Charge |
63 nC |
| Minimum Operating Temperature |
– 55 C |
| Maximum Operating Temperature |
+ 150 C |
| Pd – Power Dissipation |
125 W |
| Channel Mode |
Enhancement |
| Brand |
Vishay Semiconductors |
| Configuration |
Single |
| Fall Time |
20 ns |
| Product Type |
MOSFET |
| Rise Time |
23 ns |
| Series |
IRF |
| Factory Pack Quantity |
1000 |
| Subcategory |
MOSFETs |
| Transistor Type |
1 N-Channel |
| Typical Turn-Off Delay Time |
49 ns |
| Typical Turn-On Delay Time |
14 ns |
| Part # Aliases |
IRF840PBF-BE3 SIHF840-E3 |
| Unit Weight |
0.068784 oz |