
IRF640NPBF
Manufacturer Part Number: IRF640NPBF | Manufacturer / Brand: Infineon |
Part of Description: MOSFETs MOSFT 200V 18A 150mOhm 44.7nC | Lead Free Status / RoHS Status: 16-bit Microcontrollers - MCU MCU 3/5V 56K Pb-free 64-QFP |
Ship From: HK/Shen Zhen | Shipment Way: DHL/Fedex/TNT/UPS |
Datasheets: |
Product parameters
Manufacturer | Infineon |
Details | RoHS |
Mounting Style | SMD/SMT |
Package / Case | TO-220-3 |
Minimum Operating Temperature | – 55 C |
Maximum Operating Temperature | +175 C |
Packaging | Tube |
Moisture Sensitive | Yes |
Configuration | Single |
Factory Pack Quantity | 1500 |
Typical Turn-Off Delay Time | 23 ns |
Typical Turn-On Delay Time | 10 ns |
Width | 4.4 mm |
Unit Weight | 0.068784 oz |
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The IRF640NPBF is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon, a leading semiconductor company. This MOSFET is part of the HEXFET series and is designed for power applications. With a maximum drain-source breakdown voltage (Vds) of 200V and a continuous drain current (Id) of 18A, the IRF640NPBF is capable of handling high power levels efficiently.
The IRF640NPBF features a TO-220AB package, which is a three-pin through-hole package commonly used for power MOSFETs. This package provides excellent thermal dissipation and mechanical stability, making the IRF640NPBF suitable for demanding applications.
The MOSFET offers low on-resistance (RDS(on)), which minimizes power loss during conduction. Additionally, it has fast switching speeds, allowing for efficient operation in switching circuits. The IRF640NPBF is also characterized by its high ruggedness and avalanche energy rating, ensuring reliable performance in harsh environments.
The IRF640NPBF is lead-free and complies with RoHS regulations, making it environmentally friendly. It is suitable for a wide range of applications, including motor control, power supplies, welding equipment, and other power electronics systems.
In summary, the IRF640NPBF is a reliable and high-performance N-channel MOSFET that offers excellent electrical characteristics and thermal stability. Its compact TO-220AB package and lead-free construction make it an ideal choice for power electronics applications that require high efficiency and reliability.