IPT007N06N

The IPT007N06N is a high-performance N-channel MOSFET designed for efficient power management in various applications. Manufactured by Infineon Technologies, this MOSFET is ideal for use in power supplies, DC-DC converters, and motor control systems.

Description:

• Type: N-Channel MOSFET
• Manufacturer: Infineon Technologies
• Package: TO-220
• Mounting Type: Through Hole

Key Features:

• Drain-Source Voltage (V_DS): 60V
• Continuous Drain Current (I_D): 70A (at 25°C)
• R_DS(on): 7.5 mΩ max at V_GS = 10V
• Gate-Source Voltage (V_GS): ±20V
• Power Dissipation (P_D): 94W
• Fast Switching Speed: Optimized for high-frequency applications, minimizing switching losses.

Applications:

• DC-DC Converters: Suitable for efficient voltage regulation in various electronic devices.
• Power Supplies: Ideal for switching power supplies that require high efficiency and performance.
• Motor Control: Used in applications requiring precise motor control, such as robotics and automotive systems.
• Consumer Electronics: Found in devices requiring effective power management, including computers and audio systems.

Benefits:

• High Current Handling: Capable of managing up to 70A, making it suitable for demanding applications.
• Low R_DS(on): Reduces power loss and heat generation, enhancing overall efficiency.
• TO-220 Package: Provides excellent thermal management and is easy to mount in various applications.
• Robust Design: Built to withstand high voltage and current stresses, ensuring reliable operation.

Package Dimensions:

• Package Type: TO-220
• Mounting Style: Through hole, allowing for effective heat dissipation.

Reference Documents:

For detailed electrical specifications, thermal characteristics, and application guidelines, please refer to the IPT007N06N datasheet available on Infineon Technologies’ official website.