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IKW50N60H3
| Manufacturer Part Number: IKW50N60H3 | Manufacturer / Brand: Infineon |
| Part of Description: IGBTs HIGH SPEED SWITCHING | Lead Free Status / RoHS Status: Digital to Analog Converters - DAC Dual, 16-Bit, 1230 MSPS, TxDAC+ Digital-to-Analog Converter |
| Ship From: HK/Shen Zhen | Shipment Way: DHL/Fedex/TNT/UPS |
| Datasheets: |
Product parameters
| Manufacturer | Infineon |
| Details | RoHS |
| Mounting Style | SMD/SMT |
| Package / Case | TO-247-3 |
| Moisture Sensitive | Yes |
| Technology | Si |
| Minimum Operating Temperature | – 40 C |
| Maximum Operating Temperature | + 125 C |
| Packaging | Tube |
| Product Type | Multiplexer Switch ICs |
| Reference Voltage | 1 V, 2 V |
| Factory Pack Quantity | 240 |
| Subcategory | IGBTs |
| Width | 5.31 mm |
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The IKW50N60H3 is a high-performance, enhancement-mode n-channel MOSFET designed for power electronics applications. It features a high breakdown voltage of 600V, making it suitable for use in high-voltage circuits. With a maximum continuous drain current of 50A, this MOSFET can handle significant power loads while maintaining low power loss. The device also offers low on-resistance, which contributes to its high efficiency. Additionally, the IKW50N60H3 is designed for fast switching speeds, making it well-suited for applications requiring high-frequency operation. Overall, this MOSFET is an excellent choice for a wide range of power electronics applications, including inverters, converters, and motor drives.