FDMS4D0N12C

The FDMS4D0N12C is a high-performance N-channel MOSFET designed for efficient power management in various applications. Here are its key features and specifications:

1. Voltage and Current Ratings:
   • Maximum Drain-Source Voltage (Vds): 120V, making it suitable for high-voltage applications.
   • Continuous Drain Current (Id): 4A, allowing for substantial current handling in power circuits.
2. Low On-Resistance:
   • The MOSFET features a low on-resistance (Rds(on)) of approximately 0.4Ω at a gate-source voltage (Vgs) of 10V. This low resistance helps minimize power losses during operation, improving overall efficiency.
3. Gate Threshold Voltage:
   • The gate threshold voltage (Vgs(th)) is typically between 1.0V and 2.5V, enabling compatibility with low-voltage logic levels for easier integration into various electronic designs.
4. Fast Switching Speed:
   • Designed for rapid switching applications, the FDMS4D0N12C offers quick turn-on and turn-off times, making it ideal for use in high-frequency circuits such as DC-DC converters and power supplies.
5. Applications:
   • This MOSFET is widely used in applications such as power management systems, battery chargers, motor drives, and other switching applications where high efficiency and reliability are critical.
6. Package Type:
   • The FDMS4D0N12C is packaged in a DPAK (TO-252) package, which allows for effective thermal dissipation and easy mounting on PCBs, ensuring robustness in various environments.

Overall, the FDMS4D0N12C is a versatile and efficient N-channel MOSFET suitable for a wide range of power applications, providing reliable performance and low energy loss.