| Manufacturer |
Diodes Incorporated |
| RoHS |
Details |
| Technology |
Si |
| Mounting Style |
SMD/SMT |
| Package / Case |
SOT-23-3 |
| Transistor Polarity |
N-Channel |
| Number of Channels |
1 Channel |
| Vds – Drain-Source Breakdown Voltage |
30 V |
| Id – Continuous Drain Current |
3.8 A |
| Rds On – Drain-Source Resistance |
54 mOhms |
| Vgs – Gate-Source Voltage |
– 12 V, + 12 V |
| Vgs th – Gate-Source Threshold Voltage |
620 mV |
| Qg – Gate Charge |
8.2 nC |
| Minimum Operating Temperature |
– 55 C |
| Maximum Operating Temperature |
+ 150 C |
| Pd – Power Dissipation |
1.4 W |
| Channel Mode |
Enhancement |
| Brand |
Diodes Incorporated |
| Configuration |
Single |
| Fall Time |
3.26 ns |
| Product Type |
MOSFET |
| Rise Time |
3.49 ns |
| Series |
DMN3150 |
| Factory Pack Quantity |
3000 |
| Subcategory |
MOSFETs |
| Transistor Type |
1 N-Channel |
| Typical Turn-Off Delay Time |
15.02 ns |
| Typical Turn-On Delay Time |
1.14 ns |
| Unit Weight |
0.000282 oz |
| Length |
2.9 mm |
| Width |
1.3 mm |
| Height |
1 mm |