BSC009N04LSSCATMA1

The BSC009N04LSSCATMA1 is a high-performance N-channel MOSFET designed for efficient power management in various applications, particularly in automotive and industrial sectors. Manufactured by Infineon Technologies, this MOSFET offers low on-resistance and high current capabilities, making it suitable for use in power supplies, DC-DC converters, and motor control applications.

Description:

• Type: N-Channel MOSFET
• Manufacturer: Infineon Technologies
• Package: TO-220
• Mounting Type: Through Hole

Key Features:

• Drain-Source Voltage (V_DS): 40V
• Continuous Drain Current (I_D): 95A (at 25°C)
• R_DS(on): 9.3 mΩ max at V_GS = 10V
• Gate-Source Voltage (V_GS): ±20V
• Power Dissipation (P_D): 70W
• Thermal Resistance (RθJC): 1.4°C/W

Applications:

• Power Supplies: Ideal for switching power supplies requiring high efficiency and performance.
• DC-DC Converters: Suitable for efficient voltage regulation in various electronic devices.
• Motor Control: Used in applications requiring precise control of motors, such as automotive and industrial systems.
• Consumer Electronics: Found in devices that demand effective power management.

Benefits:

• High Current Handling: Capable of managing up to 95A, making it suitable for demanding applications.
• Low R_DS(on): Minimizes power loss and heat generation, enhancing overall efficiency.
• TO-220 Package: Provides excellent thermal management and is easy to mount in various applications.
• Robust Design: Built to withstand high voltage and current stresses, ensuring reliable operation.

Package Dimensions:

• Package Type: TO-220
• Mounting Style: Through hole, facilitating effective heat dissipation.

Reference Documents:

For detailed electrical specifications, thermal characteristics, and application guidelines, please refer to the BSC009N04LSSCATMA1 datasheet available on Infineon Technologies’ official website.