| Manufacturer: |
Toshiba |
| Product Category: |
Bipolar Transistors – BJT |
| Mounting Style: |
Through Hole |
| Package / Case: |
TO-126N-3 |
| Transistor Polarity: |
NPN |
| Configuration: |
Single |
| Collector- Emitter Voltage VCEO Max: |
160 V |
| Collector- Base Voltage VCBO: |
160 V |
| Emitter- Base Voltage VEBO: |
7 V |
| Collector-Emitter Saturation Voltage: |
300 mV |
| Maximum DC Collector Current: |
4 A |
| Pd – Power Dissipation: |
1.5 W |
| Gain Bandwidth Product fT: |
150 MHz |
| Minimum Operating Temperature: |
– 55 C |
| Maximum Operating Temperature: |
+ 150 C |
| Series: |
TTC015B |
| Brand: |
Toshiba |
| Continuous Collector Current: |
2 A |
| DC Collector/Base Gain hfe Min: |
100 |
| DC Current Gain hFE Max: |
200 |
| Product Type: |
BJTs – Bipolar Transistors |
| Subcategory: |
Transistors |
| Technology: |
Si |