TK8A65D(STA4,Q,M)

Manufacturer Part Number: TK8A65D(STA4,Q,M)	Part of Description: MOSFET N-Ch FET 650V 4.5s IDSS 10 uA 0.7 Ohm
Manufacturer / Brand: Toshiba	Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Ship From: HHK/Shen Zhen	Shipment Way: DHL/Fedex/TNT/UPS
Datasheets: TK8A65D(STA4,Q,M) Datasheet (PDF)

Product parameters

Manufacturer:	Toshiba
Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	Through Hole
Package / Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds – Drain-Source Breakdown Voltage:	650 V
Id – Continuous Drain Current:	8 A
Rds On – Drain-Source Resistance:	840 mOhms
Vgs – Gate-Source Voltage:	– 30 V, + 30 V
Vgs th – Gate-Source Threshold Voltage:	2 V
Qg – Gate Charge:	25 nC
Minimum Operating Temperature:	– 55 C
Maximum Operating Temperature:	+ 150 C
Pd – Power Dissipation:	45 W
Channel Mode:	Enhancement
Tradename:	MOSVII
Series:	TK8A65D
Packaging:	Tube
Brand:	Toshiba
Configuration:	Single
Height:	15 mm
Length:	10 mm
Product Type:	MOSFET
Factory Pack Quantity: Factory Pack Quantity:	50
Subcategory:	MOSFETs
Transistor Type:	1 N-Channel
Width:	4.5 mm
Unit Weight:	0.068784 oz