TK3P80ERQ(S

Manufacturer Part Number: TK3P80ERQ(S	Part of Description: MOSFET
Manufacturer / Brand: Toshiba	Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Ship From: HHK/Shen Zhen	Shipment Way: DHL/Fedex/TNT/UPS
Datasheets: TK3P80ERQ(S Datasheet (PDF)

Product parameters

Manufacturer:	Toshiba
Product Category:	MOSFET
REACH – SVHC:	Details
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	DPAK-3 (TO-252-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds – Drain-Source Breakdown Voltage:	800 V
Id – Continuous Drain Current:	3 A
Rds On – Drain-Source Resistance:	4.9 Ohms
Vgs – Gate-Source Voltage:	– 30 V, + 30 V
Vgs th – Gate-Source Threshold Voltage:	2.5 V
Qg – Gate Charge:	12 nC
Minimum Operating Temperature:	– 55 C
Maximum Operating Temperature:	+ 150 C
Pd – Power Dissipation:	80 W
Channel Mode:	Enhancement
Tradename:	MOSVIII
Series:	TK3P80E
Brand:	Toshiba
Configuration:	Single
Fall Time:	22 ns
Product Type:	MOSFET
Rise Time:	25 ns
Subcategory:	MOSFETs
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	70 ns
Typical Turn-On Delay Time:	50 ns
Unit Weight:	0.012699 oz