Manufacturer: |
Toshiba |
Product Category: |
MOSFET |
RoHS: |
Details |
Technology: |
Si |
Mounting Style: |
SMD/SMT |
Package / Case: |
DPAK-3 (TO-252-3) |
Transistor Polarity: |
P-Channel |
Number of Channels: |
1 Channel |
Vds – Drain-Source Breakdown Voltage: |
40 V |
Id – Continuous Drain Current: |
40 A |
Rds On – Drain-Source Resistance: |
9.1 mOhms |
Vgs – Gate-Source Voltage: |
– 20 V, + 10 V |
Vgs th – Gate-Source Threshold Voltage: |
3 V |
Qg – Gate Charge: |
83 nC |
Minimum Operating Temperature: |
– 55 C |
Maximum Operating Temperature: |
+ 175 C |
Pd – Power Dissipation: |
68 W |
Channel Mode: |
Enhancement |
Qualification: |
AEC-Q101 |
Tradename: |
U-MOSVI |
Series: |
TJ40S04M3L |
Packaging: |
Reel |
Packaging: |
Cut Tape |
Packaging: |
MouseReel |
Brand: |
Toshiba |
Configuration: |
Single |
Height: |
2.3 mm |
Length: |
6.5 mm |
Product Type: |
MOSFET |
Factory Pack Quantity: Factory Pack Quantity: |
2000 |
Subcategory: |
MOSFETs |
Transistor Type: |
1 P-Channel |
Width: |
5.5 mm |
Unit Weight: |
0.011640 oz |