| Manufacturer: |
Toshiba |
| Product Category: |
MOSFET |
| RoHS: |
Details |
| Technology: |
Si |
| Mounting Style: |
SMD/SMT |
| Package / Case: |
DPAK-3 (TO-252-3) |
| Transistor Polarity: |
P-Channel |
| Number of Channels: |
1 Channel |
| Vds – Drain-Source Breakdown Voltage: |
40 V |
| Id – Continuous Drain Current: |
40 A |
| Rds On – Drain-Source Resistance: |
9.1 mOhms |
| Vgs – Gate-Source Voltage: |
– 20 V, + 10 V |
| Vgs th – Gate-Source Threshold Voltage: |
3 V |
| Qg – Gate Charge: |
83 nC |
| Minimum Operating Temperature: |
– 55 C |
| Maximum Operating Temperature: |
+ 175 C |
| Pd – Power Dissipation: |
68 W |
| Channel Mode: |
Enhancement |
| Qualification: |
AEC-Q101 |
| Tradename: |
U-MOSVI |
| Series: |
TJ40S04M3L |
| Packaging: |
Reel |
| Packaging: |
Cut Tape |
| Packaging: |
MouseReel |
| Brand: |
Toshiba |
| Configuration: |
Single |
| Height: |
2.3 mm |
| Length: |
6.5 mm |
| Product Type: |
MOSFET |
| Factory Pack Quantity: Factory Pack Quantity: |
2000 |
| Subcategory: |
MOSFETs |
| Transistor Type: |
1 P-Channel |
| Width: |
5.5 mm |
| Unit Weight: |
0.011640 oz |