| Manufacturer: |
Toshiba |
| Product Category: |
MOSFET |
| Technology: |
Si |
| Mounting Style: |
SMD/SMT |
| Package / Case: |
SOT-23F-3 |
| Transistor Polarity: |
N-Channel |
| Number of Channels: |
1 Channel |
| Vds – Drain-Source Breakdown Voltage: |
60 V |
| Id – Continuous Drain Current: |
2.5 A |
| Rds On – Drain-Source Resistance: |
107 mOhms |
| Vgs – Gate-Source Voltage: |
– 20 V, + 20 V |
| Vgs th – Gate-Source Threshold Voltage: |
1.8 V |
| Maximum Operating Temperature: |
+ 150 C |
| Pd – Power Dissipation: |
1 W |
| Channel Mode: |
Enhancement |
| Series: |
SSM3K318 |
| Brand: |
Toshiba |
| Configuration: |
Single |
| Product Type: |
MOSFET |
| Subcategory: |
MOSFETs |
| Transistor Type: |
1 N-Channel |
| Typical Turn-Off Delay Time: |
9.5 ns |
| Typical Turn-On Delay Time: |
14 ns |
| Unit Weight: |
0.000388 oz |