| Manufacturer |
Infineon |
| RoHS |
Details |
| Technology |
Si |
| Mounting Style |
SMD/SMT |
| Package / Case |
SOIC-8 |
| Transistor Polarity |
N-Channel |
| Number of Channels |
2 Channel |
| Vds – Drain-Source Breakdown Voltage |
30 V |
| Id – Continuous Drain Current |
6.5 A |
| Rds On – Drain-Source Resistance |
29 mOhms |
| Vgs – Gate-Source Voltage |
– 20 V, + 20 V |
| Vgs th – Gate-Source Threshold Voltage |
1 V |
| Qg – Gate Charge |
22 nC |
| Minimum Operating Temperature |
– 55 C |
| Maximum Operating Temperature |
+ 150 C |
| Pd – Power Dissipation |
2 W |
| Channel Mode |
Enhancement |
| Brand |
Infineon / IR |
| Configuration |
Dual |
| Fall Time |
17 ns |
| Product Type |
MOSFET |
| Rise Time |
8.9 ns |
| Factory Pack Quantity |
4000 |
| Subcategory |
MOSFETs |
| Transistor Type |
2 N-Channel |
| Typical Turn-Off Delay Time |
26 ns |
| Typical Turn-On Delay Time |
8.1 ns |
| Part # Aliases |
IRF7313TRPBF SP001562160 |
| Unit Weight |
0.019048 oz |
| Length |
4.9 mm |
| Width |
3.9 mm |
| Height |
1.75 mm |