| Manufacturer |
Vishay |
| Product Category |
MOSFET |
| RoHS |
Details |
| Technology |
Si |
| Mounting Style |
SMD/SMT |
| Package / Case |
SOT-23-3 |
| Transistor Polarity |
P-Channel |
| Number of Channels |
1 Channel |
| Vds – Drain-Source Breakdown Voltage |
20 V |
| Id – Continuous Drain Current |
4.7 A |
| Rds On – Drain-Source Resistance |
39 mOhms |
| Vgs – Gate-Source Voltage |
– 8 V, + 8 V |
| Vgs th – Gate-Source Threshold Voltage |
400 mV |
| Qg – Gate Charge |
19 nC |
| Minimum Operating Temperature |
– 55 C |
| Maximum Operating Temperature |
+ 150 C |
| Pd – Power Dissipation |
1.25 W |
| Channel Mode |
Enhancement |
| Tradename |
TrenchFET |
| Brand |
Vishay Semiconductors |
| Configuration |
Single |
| Fall Time |
48 ns |
| Product Type |
MOSFET |
| Rise Time |
43 ns |
| Series |
SI2 |
| Factory Pack Quantity |
3000 |
| Subcategory |
MOSFETs |
| Transistor Type |
1 P-Channel |
| Typical Turn-Off Delay Time |
71 ns |
| Typical Turn-On Delay Time |
25 ns |
| Part # Aliases |
SI2323DS-T1-BE3 SI2323DS-E3 |
| Unit Weight |
0.000282 oz |
| Length |
2.9 mm |
| Width |
1.6 mm |
| Height |
1.45 mm |