IRF640NPBF

Manufacturer Part Number: IRF640NPBF	Manufacturer / Brand: Infineon
Part of Description: MOSFET MOSFT 200V 18A 150mOhm 44.7nC	Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Ship From: HK/Shen Zhen	Shipment Way: DHL/Fedex/TNT/UPS
Datasheets: datasheet-18.pdf

Product parameters

Manufacturer	Infineon
RoHS	Details
Technology	Si
Mounting Style	Through Hole
Package / Case	TO-220-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds – Drain-Source Breakdown Voltage	200 V
Id – Continuous Drain Current	18 A
Rds On – Drain-Source Resistance	150 mOhms
Vgs – Gate-Source Voltage	– 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage	2 V
Qg – Gate Charge	44.7 nC
Minimum Operating Temperature	– 55 C
Maximum Operating Temperature	+ 175 C
Pd – Power Dissipation	150 W
Channel Mode	Enhancement
Brand	Infineon / IR
Configuration	Single
Fall Time	5.5 ns
Product Type	MOSFET
Rise Time	19 ns
Factory Pack Quantity	2000
Subcategory	MOSFETs
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	23 ns
Typical Turn-On Delay Time	10 ns
Part # Aliases	IRF640NPBF SP001570078
Unit Weight	0.068784 oz
Length	10 mm
Width	4.4 mm
Height	15.65 mm