HMC326MS8GETR

The HMC326MS8GE (note: the suffix “TR” may refer to a specific packaging or version, but it is not explicitly detailed here; for the sake of this description, we will focus on the HMC326MS8GE) is a high-efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC driver amplifier. It operates within a frequency range of 3.0 to 4.5 GHz, making it suitable for a variety of applications.

Key Features:

• Frequency Range: 3.0 – 4.5 GHz
• High Efficiency: The amplifier is designed for high power-added efficiency (PAE), optimized to provide greater than 40% PAE.
• High Gain: It offers a high gain of 21 dB, which is beneficial for signal amplification in various radio systems.
• Saturated Power: The saturated power output is +26 dBm, providing sufficient power for driving subsequent stages in the signal chain.
• Power Supply: Operates from a +5V supply voltage, making it compatible with many standard power supplies.
• Power Down Capability: The amplifier includes a power down feature to conserve current consumption when not in use, which is useful for power management in battery-powered devices.
• Package: The HMC326MS8GE is packaged in a low-cost, surface-mount 8-leaded package with an exposed base for improved RF and thermal performance.

Applications:

• Microwave Radios: Suitable for use in microwave communication systems.
• Broadband Radio Systems: Ideal for amplifying signals in broadband radio networks.
• Wireless Local Loop Driver Amplifier: Can be used as a driver amplifier in wireless local loop systems.

Manufacturer:

The HMC326MS8GE is manufactured by Hittite Microwave Corporation (now part of Analog Devices), a leading supplier of RF, microwave, and millimeterwave components and assemblies.

In summary, the HMC326MS8GE is a high-performance driver amplifier that combines high efficiency, high gain, and a compact package, making it well-suited for a range of microwave and radio frequency applications.