IKW30N60H3

The IKW30N60H3 is a high-performance Insulated Gate Bipolar Transistor (IGBT) from Infineon Technologies. It is designed for applications requiring high efficiency, low electromagnetic interference (EMI), and fast switching speeds.

Key Features:

1. Voltage and Current Ratings:

   • Collector-Emitter Breakdown Voltage (Vces): 600V
   • Collector Current (Ic) Max: 60A
   • Collector Pulsed Current (Icp): 120A

2. Fast Switching Speed:

   • Turn-on Delay Time (td(on)): 21ns
   • Turn-off Delay Time (td(off)): 207ns
   • Reverse Recovery Time (trr): 38ns (typical)

3. Low On-State Voltage (Vce(on)):

   • Vce(on) at 15V Gate Drive, 30A Collector Current: 2.4V

4. TrenchStop Technology:

   • Features TrenchStop™ IGBT technology for low saturation voltage (Vce(sat)) and excellent switching performance.

5. Integrated Anti-Parallel Diode:

   • An anti-parallel diode is integrated for fast recovery and soft switching behavior.

6. Package and Mounting:

   • Packaged in a TO-247 flange-mount package, providing robust mechanical and thermal performance.
   • Suitable for surface-mount or through-hole mounting.

7. High Power Density:

   • Capable of handling high power levels with a maximum power dissipation (Ptot) of 187W.

8. Thermal Management:

   • Designed for operation over a wide temperature range, with a maximum junction temperature (Tj(max)) of 175°C for short-circuit conditions.

Applications:

The IKW30N60H3 is suitable for a variety of applications including:

• Uninterruptible Power Supplies (UPS)
• Industrial Heating and Welding Equipment
• Solar Power Systems
• Commercial HVAC Systems
• Motor Control for Washers and Dryers

Summary:

The IKW30N60H3 is a high-speed, high-power IGBT designed for efficient and reliable switching in demanding applications. Its combination of fast switching speeds, low on-state voltage, and robust packaging makes it an excellent choice for a wide range of industrial and power electronics applications.