MT41K128M16JT-125 IT:K
| Manufacturer Part Number: MT41K128M16JT-125 IT:K | Manufacturer / Brand: Micron |
| Part of Description: DRAM DDR3 2G 128MX16 FBGA IT LV V89C | Lead Free Status / RoHS Status: 16-bit Microcontrollers - MCU MCU 3/5V 56K Pb-free 64-QFP |
| Ship From: HK/Shen Zhen | Shipment Way: DHL/Fedex/TNT/UPS |
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Datasheets:
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Product parameters
| Manufacturer | Micron |
| Details | RoHS |
| Mounting Style | SMD/SMT |
| Minimum Operating Temperature | – 40 C |
| Maximum Operating Temperature | +95 C |
| Packaging | Tray |
| Moisture Sensitive | Yes |
| Product Type | DRAM |
| Factory Pack Quantity | 1224 |
| Subcategory | Memory & Data Storage |
| Protocol Supported | CAN |
| Supply Current – Max | 65 mA |
| Unit Weight | 0.115670 oz |
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The MT41K128M16JT-125IT:K is a high-density DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) module, specifically designed for use in advanced computing and storage systems. This memory module offers a capacity of 16GB, achieved through a configuration of 128Mx16 (128 million rows by 16 columns) and organized as 8GB x 2 banks. It operates at a speed of 2400MT/s (Megatransfers per second), providing fast data access and throughput for demanding applications.
The MT41K128M16JT-125IT:K features a DDR4 interface, which supports data rates up to twice the memory clock, enabling efficient data transfer. It operates with a supply voltage of 1.2V, making it energy-efficient compared to previous generations of DDR memory. Additionally, it incorporates advanced error correction and data integrity features to ensure reliable performance in critical applications.
The “-125IT:K” suffix indicates specific characteristics of the module, such as the operating temperature range (-40°C to +85°C) and other potential package or testing specifications. This makes the MT41K128M16JT-125IT:K suitable for a wide range of environments and applications, including servers, high-performance computing systems, and industrial equipment.
Overall, the MT41K128M16JT-125IT:K offers a combination of high capacity, fast speed, and energy efficiency, making it a valuable component for modern computing and storage solutions.