NP90N06VDK-E1-AY

Product parameters

Manufacturer:	Renesas Electronics
Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	TO-252-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds – Drain-Source Breakdown Voltage:	60 V
Id – Continuous Drain Current:	90 A
Rds On – Drain-Source Resistance:	5.3 mOhms
Vgs – Gate-Source Voltage:	– 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage:	2.5 V
Qg – Gate Charge:	63 nC
Maximum Operating Temperature:	+ 175 C
Pd – Power Dissipation:	147 W
Channel Mode:	Enhancement
Series:	MOSFET
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Renesas Electronics
Configuration:	Single
Fall Time:	6 ns
Forward Transconductance – Min:	40 S
Height:	2.65 mm
Length:	6.5 mm
Product Type:	MOSFET
Rise Time:	7 ns
Factory Pack Quantity: Factory Pack Quantity:	2500
Subcategory:	MOSFETs
Typical Turn-Off Delay Time:	24 ns
Typical Turn-On Delay Time:	60 ns
Width:	6.1 mm