STGWA60H65DFB

Manufacturer Part Number: STGWA60H65DFB	Part of Description: IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 60 A high speed
Manufacturer / Brand: STMicroelectronics	Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Ship From: HHK/Shen Zhen	Shipment Way: DHL/Fedex/TNT/UPS
Datasheets: STGWA60H65DFB Datasheet (PDF)

Product parameters

Manufacturer:	STMicroelectronics
Product Category:	IGBT Transistors
RoHS:	Details
Technology:	Si
Package / Case:	TO-247-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	2 V
Maximum Gate Emitter Voltage:	– 20 V, 20 V
Continuous Collector Current at 25 C:	80 A
Pd – Power Dissipation:	375 W
Minimum Operating Temperature:	– 55 C
Maximum Operating Temperature:	+ 175 C
Series:	STGWA60H65DFB
Packaging:	Tube
Brand:	STMicroelectronics
Continuous Collector Current:	80 A
Continuous Collector Current Ic Max:	80 A
Gate-Emitter Leakage Current:	250 nA
Height:	5.15 mm
Length:	20.15 mm
Operating Temperature Range:	– 55 C to + 175 C
Product Type:	IGBT Transistors
Factory Pack Quantity: Factory Pack Quantity:	600
Subcategory:	IGBTs
Width:	15.75 mm
Unit Weight:	1.340411 oz