Manufacturer: |
Toshiba |
Product Category: |
Bipolar Transistors – BJT |
Mounting Style: |
Through Hole |
Package / Case: |
TO-126N-3 |
Transistor Polarity: |
NPN |
Configuration: |
Single |
Collector- Emitter Voltage VCEO Max: |
160 V |
Collector- Base Voltage VCBO: |
160 V |
Emitter- Base Voltage VEBO: |
7 V |
Collector-Emitter Saturation Voltage: |
300 mV |
Maximum DC Collector Current: |
4 A |
Pd – Power Dissipation: |
1.5 W |
Gain Bandwidth Product fT: |
150 MHz |
Minimum Operating Temperature: |
– 55 C |
Maximum Operating Temperature: |
+ 150 C |
Series: |
TTC015B |
Brand: |
Toshiba |
Continuous Collector Current: |
2 A |
DC Collector/Base Gain hfe Min: |
100 |
DC Current Gain hFE Max: |
200 |
Product Type: |
BJTs – Bipolar Transistors |
Subcategory: |
Transistors |
Technology: |
Si |