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Product parameters
| Manufacturer: | Toshiba |
| Product Category: | MOSFET |
| RoHS: | Details |
| Technology: | Si |
| Mounting Style: | Through Hole |
| Package / Case: | TO-220-3 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds – Drain-Source Breakdown Voltage: | 650 V |
| Id – Continuous Drain Current: | 8 A |
| Rds On – Drain-Source Resistance: | 840 mOhms |
| Vgs – Gate-Source Voltage: | – 30 V, + 30 V |
| Vgs th – Gate-Source Threshold Voltage: | 2 V |
| Qg – Gate Charge: | 25 nC |
| Minimum Operating Temperature: | – 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd – Power Dissipation: | 45 W |
| Channel Mode: | Enhancement |
| Tradename: | MOSVII |
| Series: | TK8A65D |
| Packaging: | Tube |
| Brand: | Toshiba |
| Configuration: | Single |
| Height: | 15 mm |
| Length: | 10 mm |
| Product Type: | MOSFET |
| Factory Pack Quantity: Factory Pack Quantity: | 50 |
| Subcategory: | MOSFETs |
| Transistor Type: | 1 N-Channel |
| Width: | 4.5 mm |
| Unit Weight: | 0.068784 oz |
Lead free / RoHS Compliant