2SC5200N(S1,E,S)

Manufacturer Part Number: 2SC5200N(S1,E,S)	Part of Description: Bipolar Transistors - BJT POWER TRANSISTOR PC=150W; F=30MHZ
Manufacturer / Brand: Toshiba	Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Ship From: HHK/Shen Zhen	Shipment Way: DHL/Fedex/TNT/UPS
Datasheets: 2SC5200N(S1,E,S) Datasheet (PDF)

Product parameters

Manufacturer:	Toshiba
Product Category:	Bipolar Transistors – BJT
RoHS:	Details
Mounting Style:	Through Hole
Package / Case:	TO-3P-3
Transistor Polarity:	NPN
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	230 V
Collector- Base Voltage VCBO:	230 V
Emitter- Base Voltage VEBO:	5 V
Collector-Emitter Saturation Voltage:	400 mV
Maximum DC Collector Current:	15 A
Pd – Power Dissipation:	150 W
Gain Bandwidth Product fT:	30 MHz
Minimum Operating Temperature:	–
Maximum Operating Temperature:	+ 150 C
Series:	2SC
Packaging:	Tube
Brand:	Toshiba
Continuous Collector Current:	15 A
DC Collector/Base Gain hfe Min:	55
DC Current Gain hFE Max:	160
Product Type:	BJTs – Bipolar Transistors
Factory Pack Quantity: Factory Pack Quantity:	25
Subcategory:	Transistors
Technology:	Si
Unit Weight:	0.245577 oz