NP100P06PDG-E1-AY

Manufacturer Part Number: NP100P06PDG-E1-AY	Part of Description: MOSFET LOW VOLTAGE POWER MOSFET
Manufacturer / Brand: Renesas Electronics	Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Ship From: HHK/Shen Zhen	Shipment Way: DHL/Fedex/TNT/UPS
Datasheets: NP100P06PDG-E1-AY Datasheet (PDF)

Product parameters

Manufacturer:	Renesas Electronics
Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	TO-263-4
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds – Drain-Source Breakdown Voltage:	60 V
Id – Continuous Drain Current:	100 A
Rds On – Drain-Source Resistance:	6 mOhms
Vgs – Gate-Source Voltage:	– 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage:	2.5 V
Qg – Gate Charge:	300 nC
Minimum Operating Temperature:	– 55 C
Maximum Operating Temperature:	+ 175 C
Pd – Power Dissipation:	1.8 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Renesas Electronics
Configuration:	Single
Fall Time:	100 ns
Forward Transconductance – Min:	43 S
Height:	4.9 mm
Length:	10 mm
Product Type:	MOSFET
Rise Time:	35 ns
Factory Pack Quantity: Factory Pack Quantity:	800
Subcategory:	MOSFETs
Typical Turn-Off Delay Time:	275 ns
Typical Turn-On Delay Time:	28 ns
Width:	9.15 mm
Unit Weight:	0.139332 oz