| Manufacturer: |
STMicroelectronics |
| Product Category: |
IGBT Transistors |
| RoHS: |
Details |
| Technology: |
Si |
| Package / Case: |
TO-247-3 |
| Mounting Style: |
Through Hole |
| Configuration: |
Single |
| Collector- Emitter Voltage VCEO Max: |
650 V |
| Collector-Emitter Saturation Voltage: |
1.8 V |
| Maximum Gate Emitter Voltage: |
– 20 V, 20 V |
| Continuous Collector Current at 25 C: |
80 A |
| Pd – Power Dissipation: |
283 W |
| Minimum Operating Temperature: |
– 55 C |
| Maximum Operating Temperature: |
+ 175 C |
| Series: |
STGW40H65DFB |
| Packaging: |
Tube |
| Brand: |
STMicroelectronics |
| Continuous Collector Current Ic Max: |
40 A |
| Gate-Emitter Leakage Current: |
250 nA |
| Product Type: |
IGBT Transistors |
| Factory Pack Quantity: Factory Pack Quantity: |
600 |
| Subcategory: |
IGBTs |
| Unit Weight: |
1.340411 oz |