Manufacturer |
Vishay |
RoHS |
Details |
Technology |
Si |
Mounting Style |
SMD/SMT |
Package / Case |
PowerPAK-1212-8 |
Transistor Polarity |
N-Channel |
Number of Channels |
1 Channel |
Vds – Drain-Source Breakdown Voltage |
30 V |
Id – Continuous Drain Current |
35 A |
Rds On – Drain-Source Resistance |
6 mOhms |
Vgs – Gate-Source Voltage |
– 20 V, + 20 V |
Vgs th – Gate-Source Threshold Voltage |
1.15 V |
Qg – Gate Charge |
42 nC |
Minimum Operating Temperature |
– 55 C |
Maximum Operating Temperature |
+ 150 C |
Pd – Power Dissipation |
52 W |
Channel Mode |
Enhancement |
Tradename |
TrenchFET, PowerPAK |
Brand |
Vishay Semiconductors |
Configuration |
Single |
Product Type |
MOSFET |
Series |
SIS |
Factory Pack Quantity |
3000 |
Subcategory |
MOSFETs |
Part # Aliases |
SIJ484DP-T1-GE3 |
Unit Weight |
0.032487 oz |