SI7726DN-T1-GE3

Manufacturer Part Number: SI7726DN-T1-GE3	Manufacturer / Brand: Vishay
Part of Description: MOSFET 30V 35A 52W 9.5mohm @ 10V	Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Ship From: HK/Shen Zhen	Shipment Way: DHL/Fedex/TNT/UPS
Datasheets: datasheet-227.pdf

Product parameters SI7726DN-T1-GE3

Manufacturer	Vishay
RoHS	Details
Technology	Si
Mounting Style	SMD/SMT
Package / Case	PowerPAK-1212-8
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds – Drain-Source Breakdown Voltage	30 V
Id – Continuous Drain Current	35 A
Rds On – Drain-Source Resistance	9.5 mOhms
Vgs – Gate-Source Voltage	– 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage	1.4 V
Qg – Gate Charge	43 nC
Minimum Operating Temperature	– 50 C
Maximum Operating Temperature	+ 150 C
Pd – Power Dissipation	52 W
Channel Mode	Enhancement
Tradename	TrenchFET
Brand	Vishay Semiconductors
Configuration	Single
Product Type	MOSFET
Series	SI7
Factory Pack Quantity	3000
Subcategory	MOSFETs
Part # Aliases	SI7726DN-GE3
Unit Weight	0.032487 oz