SI4925DDY-T1-GE3

Manufacturer Part Number: SI4925DDY-T1-GE3	Manufacturer / Brand: Vishay
Part of Description: MOSFET -30V Vds 20V Vgs SO-8	Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Ship From: HK/Shen Zhen	Shipment Way: DHL/Fedex/TNT/UPS
Datasheets: datasheet-239.pdf

Product parameters SI4925DDY-T1-GE3

Manufacturer	Vishay
RoHS	Details
Technology	Si
Mounting Style	SMD/SMT
Package / Case	SOIC-8
Transistor Polarity	P-Channel
Number of Channels	2 Channel
Vds – Drain-Source Breakdown Voltage	30 V
Id – Continuous Drain Current	8 A
Rds On – Drain-Source Resistance	29 mOhms
Vgs – Gate-Source Voltage	– 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage	1 V
Qg – Gate Charge	32 nC
Minimum Operating Temperature	– 55 C
Maximum Operating Temperature	+ 150 C
Pd – Power Dissipation	5 W
Channel Mode	Enhancement
Tradename	TrenchFET
Brand	Vishay Semiconductors
Configuration	Dual
Fall Time	12 ns
Product Type	MOSFET
Rise Time	8 ns
Series	SI4
Factory Pack Quantity	2500
Subcategory	MOSFETs
Transistor Type	2 P-Channel
Typical Turn-Off Delay Time	45 ns
Typical Turn-On Delay Time	10 ns
Part # Aliases	SI4925DDY-GE3
Unit Weight	0.006596 oz
Length	4.9 mm
Width	3.9 mm
Height	1.75 mm