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Manufacturer Part Number: SI4925DDY-T1-GE3 Manufacturer / Brand: Vishay
Part of Description: MOSFET -30V Vds 20V Vgs SO-8 Lead Free Status / RoHS Status: table_img Lead free / RoHS Compliant
Ship From: HK/Shen Zhen Shipment Way: DHL/Fedex/TNT/UPS

Product parameters SI4925DDY-T1-GE3

Manufacturer Vishay
RoHS Details
Technology Si
Mounting Style SMD/SMT
Package / Case SOIC-8
Transistor Polarity P-Channel
Number of Channels 2 Channel
Vds – Drain-Source Breakdown Voltage 30 V
Id – Continuous Drain Current 8 A
Rds On – Drain-Source Resistance 29 mOhms
Vgs – Gate-Source Voltage – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage 1 V
Qg – Gate Charge 32 nC
Minimum Operating Temperature – 55 C
Maximum Operating Temperature + 150 C
Pd – Power Dissipation 5 W
Channel Mode Enhancement
Tradename TrenchFET
Brand Vishay Semiconductors
Configuration Dual
Fall Time 12 ns
Product Type MOSFET
Rise Time 8 ns
Series SI4
Factory Pack Quantity 2500
Subcategory MOSFETs
Transistor Type 2 P-Channel
Typical Turn-Off Delay Time 45 ns
Typical Turn-On Delay Time 10 ns
Part # Aliases SI4925DDY-GE3
Unit Weight 0.006596 oz
Length 4.9 mm
Width 3.9 mm
Height 1.75 mm

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