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SI2369DS-T1-GE3

Manufacturer Part Number: SI2369DS-T1-GE3 Manufacturer / Brand: Vishay
Part of Description: MOSFET -30V Vds 20V Vgs SOT-23 Lead Free Status / RoHS Status: table_img Lead free / RoHS Compliant
Ship From: HK/Shen Zhen Shipment Way: DHL/Fedex/TNT/UPS
Datasheets:

Product parameters

Manufacturer Vishay
RoHS Details
Technology Si
Mounting Style SMD/SMT
Package / Case SOT-23-3
Transistor Polarity P-Channel
Number of Channels 1 Channel
Vds – Drain-Source Breakdown Voltage 30 V
Id – Continuous Drain Current 7.6 A
Rds On – Drain-Source Resistance 29 mOhms
Vgs – Gate-Source Voltage – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage 2.5 V
Qg – Gate Charge 11.4 nC
Minimum Operating Temperature – 55 C
Maximum Operating Temperature + 150 C
Pd – Power Dissipation 2.5 W
Channel Mode Enhancement
Tradename TrenchFET
Brand Vishay Semiconductors
Configuration Single
Fall Time 6 ns
Product Type MOSFET
Rise Time 4 ns
Series SI2
Factory Pack Quantity 3000
Subcategory MOSFETs
Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 38 ns
Typical Turn-On Delay Time 13 ns
Part # Aliases SI2369DS-T1-BE3
Unit Weight 0.000282 oz
Length 2.9 mm
Width 1.6 mm
Height 1.45 mm

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